MOSFET - Power, Single N-Channel STD Gate, SO8FL 80 V, 3 m, 135 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  Synchronous Rectificati

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安森美半导体

丝印：3D0N8W；Package：DFNW5；MOSFET - Power, Single N-Channel STD Gate, SO8FL 80 V, 3 m, 135 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  Synchronous Rectificati

文件：165.65 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.6 m, 154 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

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安森美半导体

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