MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.6 m, 154 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

文件：149.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.6 m, 154 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

文件：149.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.6mΩ, 154 A

T10 80V MOSFET is a best-in-class product in 80V market. This product will be a best solution in Cloud power, 5G Telecom, other PSU application, DC/DC and industrial application. And this provide better performance with improved system efficiency and high power density with below performance feature • Low QRR, Soft Recovery Body Diode\n• Low RDS(on) to Minimize Conduction Losses\n• Low QG and Capacitance to Minimize Driver Losses\n• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant;

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel STD Gate, SO8FL 80 V, 3 m, 135 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  Synchronous Rectificati

文件：165.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体