MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.9 m, 278 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

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丝印：0D9N4L；Package：DFN5；MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.9 m, 278 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：183.14 Kbytes 页数：8 Pages

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安森美半导体

Power MOSFET, Single, N-Channel, 40V, 0.9mΩ, 278A, SO8-FL 5x6

The latest 40V power MOSFET technology with best-in-class of Figure-of-Merit. Lower On-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behaivor can perform lower • Latest 40V MOSFET Technology.\n• Lowest On-Resistance in 5x6 Package.\n• Less Peak Reverse Recovery Current with Good Softness Performance.\n• Lower Output Charge by Smaller Output Capacitance.;

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MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

文件：347.61 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6 40 V, 0.85 m, 313 A

文件：387.61 Kbytes 页数：7 Pages

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MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

文件：372.14 Kbytes 页数：7 Pages

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安森美半导体