丝印：410NDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

文件：347.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：410LDC；Package：DFN8；MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6 40 V, 0.85 m, 313 A

文件：387.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET, 40V N Channel __A 0.87m Ohm in Dualcool56 package

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal re • Top and bottom sided exposed in standard 5x6mm pin-out\n• Improved thermal dissipation through top and bottom side of the package\n• Ultra low RDS-on\n• Reduced conduction loss\n• Reduced capacitances and package inductance\n• Reduced switching loss;

ONSEMI

安森美半导体

Power MOSFET, 40V N Channel __A 0.9m Ohm in Dualcool56 package

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal re • Top and bottom sided exposed in standard 5x6mm pin-out\n• Improved thermal dissipation through top and bottom side of the package\n• Ultra low RDS-on\n• Reduced conduction loss\n• Reduced capacitances and package inductance\n• Reduced switching loss;

ONSEMI

安森美半导体