NTMFSC0D9N04CL数据手册ONSEMI中文资料规格书

描述 Description

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

特性 Features

• Top and bottom sided exposed in standard 5x6mm pin-out
• Improved thermal dissipation through top and bottom side of the package
• Ultra low RDS-on
• Reduced conduction loss
• Reduced capacitances and package inductance
• Reduced switching loss

应用 Application

• Synchronous Rectifier in AC-DC and DC-DC power supplies
• Motor Switch
• Load switch
• Power Supplies
• Motor control
• Solar Inverters
• Motor Control