丝印：410NDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • MSL1 R

文件：386.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：410NDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

文件：347.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体