FDMA410NZT-F130芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FDMA410NZT	文件：485.92 Kbytes Page：9 Pages	丝印：410T；Package：MicroFET2x2；MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package 文件：485.92 Kbytes 页数：9 Pages	ONSEMI 安森美半导体	ONSEMI
FDMA410NZT-F130	文件：485.92 Kbytes Page：9 Pages	丝印：410T；Package：MicroFET2x2；MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package 文件：485.92 Kbytes 页数：9 Pages	ONSEMI 安森美半导体	ONSEMI

更多410T供应商更新时间2025-9-13 16:12:00