丝印：410T；Package：MicroFET2x2；MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

文件：485.92 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：410T；Package：MicroFET2x2；MOSFET – N-Channel, POWERTRENCH, Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m

Description This Single N−Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe. This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package

文件：485.92 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

超薄 N 沟道，1.5 V，PowerTrench® MOSFET，20V，9.5A，23mΩ

该单 N-沟道 MOSFET 采用飞兆先进的 Power Trench 工艺设计而成，用于优化 VGS = 1.5 V 时专用 MicroFET 引线框上的rDS(ON)。这种设计和 FDMA410NZ 相似，然而它采用我们先进的 0.55 mm 最大 2x2 MLP 新型封装技术。 • 0.55 mm 最大封装高度 MicroFET 2x2 mm 封装\n• 最大值 rDS(on) = 23 mΩ（VGS = 4.5 V、 ID = 9.5 A）\n• 最大值 rDS(on) = 29 mΩ（VGS = 2.5 V、 ID = 8.0 A）\n• 最大值 rDS(on) = 36 mΩ（VGS = 1.8 V、 ID = 4.0 A）\n• 最大值 rDS(on) = 50 m： （VGS = 1.5 V、ID = 2.0 A）\n• HBM 静电放电保护等级>2.5 kV（注 3）\n• 薄型 – 最大 0.8 mm，采用新型 MicroFET 2x2 mm 封装\n•;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 20 V, 7 A, 26 m廓

文件：256.93 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

4.0A UITRASOFT RECOVERY BRIDGE

文件：960.93 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Battery Mount ZCASE® Fuse Holder With Busbar

• Specifically designed to relocate circuit protection closer to a vehicle battery and expand battery grounding • Integrated busbar • Plastic cover & overmolded housing • Battery clamp oriented to provide clearance for wire routing

文件：347.74 Kbytes 页数：1 Pages

LITTELFUSE

力特