FDMA410NZT中文资料安森美半导体数据手册PDF规格书

描述 Description

This Single N−Channel MOSFET has been designed using

ON Semiconductor’s advanced Power Trench process to optimize the

RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe.

This design is similar to the FDMA410NZ, however it features our

new advanced 0.55 mm max 2 x 2 MLP package technology.

特性 Features

• 0.55 mm max package height MicroFET 2 x 2 mm Package

• Max RDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A

• Max RDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 A

• Max RDS(on) = 36 m at VGS = 1.8 V, ID = 4.0 A

• Max RDS(on) = 60 m at VGS = 1.5 V, ID = 2.0 A

• HBM ESD protection level > 1.5 kV (Note 3)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Typical Applications

• Li−lon Battery Pack

• Baseband Switch

• Load Switch

• DC−DC Conversion

• Mobile Device Switching