NVMFWS1D3N04XM

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AECQ101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •Ba

NVMFWS1D3N04XMT1G

Marking：1D3N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AECQ101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •Ba

NTMFS1D3N04XM

MOSFET-Power,SingleN-Channel,STDGate,SO8FL40V,1.3m,195A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •ORing

NTMJS1D3N04C

PowerMOSFET40V,1.3m,235A,SingleN?묬hannel

NTMJS1D3N04CTWG

PowerMOSFET40V,1.3m,235A,SingleN?묬hannel

NTMYS1D3N04C

MOSFET??Power,Single,N-Channel40V,1.15m,252A

NTMYS1D3N04CTWG

MOSFET??Power,Single,N-Channel40V,1.15m,252A

NTTFSSCH1D3N04XL

MOSFET-Power,SingleN-Channel,SourceDownDualCool33,WDFN940V,1.3m,207A

Features •ExcellentThermalConductionbyAdvancedSource−DownCenter GateDual−CoolingPackageTechnology(3.3x3.3mm) •LowRDS(on)toMinimizeConductionLoss •LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike •LowQGandCapacitancetoMinimizeDrivingandSwitchingLos

NTTFSSCH1D3N04XL

MOSFET-Power,SingleN-Channel,SourceDownDualCool33,WDFN940V,1.3m,207A

Features •ExcellentThermalConductionbyAdvancedSource−DownCenter GateDual−CoolingPackageTechnology(3.3x3.3mm) •LowRDS(on)toMinimizeConductionLoss •LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike •LowQGandCapacitancetoMinimizeDrivingandSwitchingLos

NTTFSSH1D3N04XL

MOSFET-Power,SingleN-Channel,SourceDown,WDFN940V,1.3m,207A

Features •AdvancedSource−DownPackageTechnology(3.3x3.3mm)with ExcellentThermalConduction •LowRDS(on)toMinimizeConductionLoss •LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike •LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses •TheseDevicesar