MOSFET – Power, Single N-Channel 100 V, 3.9 m, 138 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：211.38 Kbytes 页数：7 Pages

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丝印：004W10；Package：DFN5；MOSFET – Power, Single N-Channel 100 V, 3.9 m, 138 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：211.38 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single, N-Channel 100 V, 3.9mΩ, 138A

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC-Q101 Qualified and PPAP Capablwe\n• Automotive Qualified\n• RoHS Compliant;

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安森美半导体

MOSFET - Power, N-Channel 100 V, 4.2 m, 201 A

文件：216.64 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel, D2PAK7 100 V, 4.1 m, 203 A

文件：306.8 Kbytes 页数：8 Pages

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安森美半导体