MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applications • Synchronous Rectification

文件：168.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applications • Synchronous Rectification

文件：168.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectific

文件：423.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectific

文件：423.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体