MOSFET – Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectific

文件：423.49 Kbytes 页数：8 Pages

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安森美半导体

丝印：3W；Package：DFN85x6；MOSFET – Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectific

文件：423.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET – PowerTrench® T10, Single, N-Channel, STD Gate, DUALCOOL DFN8 5x680 V, 1.9 mΩ, 201 A

PowerTrench® T10 80V MOSFET is a best-in-class product in 80V market. This product will be a best solution in Cloud power, 5G Telecom, other PSU application, DC/DC and industrial application. And this provide better performance with improved system efficiency and high power density with below perfor

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applications • Synchronous Rectification

文件：168.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applications • Synchronous Rectification

文件：168.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体