MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：156.7 Kbytes 页数：7 Pages

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丝印：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：156.7 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mΩ, 253 A

T10 80V MOSFET is a best-in-class product in 80V market. This product will be a best solution in Cloud power, 5G Telecom, other PSU application, DC/DC and industrial application. And this provide better performance with improved system efficiency and high power density with below performance feature • Low QRR, Soft Recovery Body Diode\n• Low RDS(on) to Minimize Conduction Losses\n• Low QG and Capacitance to Minimize Driver Losses\n• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant;

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安森美半导体

MOSFET - Power, Single N-Channel 80 V, 1.5 m, 255 A

文件：475.82 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel, DFNW8 80 V, 1.56 m, 287 A

文件：412.23 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL 80 V, 1.56 m, 287 A

文件：418.28 Kbytes 页数：7 Pages

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安森美半导体