MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL®80 V, 1.56 mΩ, 287 A

MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL®80 V, 1.56 mΩ, 287 A • Small Footprint (8x8 mm) for Compact Design\n• Optimized Switching performance\n• Low RDS(on) to Minimize Conduction Losses\n• Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching\n• Low QG and Capacitance to Minimize Driver Losses\n• High efficiency with lower switching s;

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丝印：N1D5N08；Package：DFNW8；MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL 80 V, 1.56 m, 287 A

文件：418.28 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC Qualified and PPAP Capable  These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications  Synchronous Rectification (

文件：164.26 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 80 V, 1.4 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：406.91 Kbytes 页数：7 Pages

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安森美半导体