NTMTSC1D5N08MC

MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL®80 V, 1.56 mΩ, 287 A; • Small Footprint (8x8 mm) for Compact Design\n• Optimized Switching performance\n• Low RDS(on) to Minimize Conduction Losses\n• Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching\n• Low QG and Capacitance to Minimize Driver Losses\n• High efficiency with lower switching spike and EMI\n• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant\n• Improved switching FOM particularly Qgd\n;

MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL®80 V, 1.56 mΩ, 287 A

NTMTSC1D5N08MC

Marking：N1D5N08；Package：DFNW8；MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL 80 V, 1.56 m, 287 A

NTBLS1D5N08MC

MOSFET-Power,SingleN-Channel,TOLL80V,1.53m,298A

NTMFWS1D5N08X

MOSFET-Power,SingleN-Channel,STDGate,SO8FL-HEFET80V,1.5m,247A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications •SynchronousRectification(SR)inDC−DCandAC−DC •Primary

NTMTS1D5N08H

MOSFET-Power,SingleN-Channel80V,1.5m,255A

NTMTS1D5N08MC

MOSFET-Power,SingleN-Channel,DFNW880V,1.56m,287A

NVMFWS1D5N08X

MOSFET-Power,SingleN-Channel,STDGate,SO8FL80V,1.43m,253A

Features LowQRR,SoftRecoveryBodyDiode LowRDS(on)toMinimizeConductionLosses LowQGandCapacitancetoMinimizeDriverLosses AECQualifiedandPPAPCapable TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications SynchronousRectification(

NVMTS1D5N08H

MOSFET-Power,SingleN-Channel80V,1.4m,273A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant