Single N-Channel Power MOSFET 80V, 287A, 1.56mΩ, PQFN 8x8

This N-Channel PTNG 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• Soft Body diode with lo;

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丝印：NTMTS1D5N08MC；Package：DFNW8；MOSFET - Power, Single N-Channel, DFNW8 80 V, 1.56 m, 287 A

文件：412.23 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL 80 V, 1.56 m, 287 A

文件：418.28 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC Qualified and PPAP Capable  These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications  Synchronous Rectification (

文件：164.26 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 80 V, 1.4 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：406.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体