丝印：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：156.7 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC Qualified and PPAP Capable  These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications  Synchronous Rectification (

文件：164.26 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

ON
SOP8

ON

上传：深圳市昊创电子有限公司

ON/安森美
SMD

ON/安森美

上传：深圳市明嘉莱科技有限公司

ON
SOT883

ON

上传：深圳市兴灿科技有限公司