丝印：4177P；Package：SOP-8；-30V P-Channel MOSFET

•Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •SOP-8 Surface Mount Package Saves Board Space VDS (V) = -30V ID = -11.4A (VGS = -10V) RDS(ON)

文件：377.1 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：4177P；Package：SOP-8；-30V P-Channel MOSFET

•Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •SOP-8 Surface Mount Package Saves Board Space VDS (V) = -30V ID = -11.4A (VGS = -10V) RDS(ON)

文件：377.1 Kbytes 页数：6 Pages

UMW

友台半导体

Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8

文件：91.94 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

P-Channel 30-V (D-S) MOSFET

文件：994.96 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8

文件：91.94 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

功率 MOSFET -30V -11.4A 19 mΩ 单 P 沟道 SO-8

This is a 30 V P-Channel Power MOSFET. • Low RDS(on)\n• Minimize Conduction Losses\n• Low Capacitance\n• Minimize Driver Losses\n• Optimized Gate Charge\n• Minimize Switching Losses\n• SOIC-8 Surface Mount Package \n• Saves Board Space;

ONSEMI

安森美半导体