MOSFET, Power, Single, N-Channel, Source-Down, TDFN9,  60V, 1.3mΩ, 243A

MOSFET, Power, Single, N-Channel, Source-Down, TDFN9,  60V, 1.3mΩ, 243A • Low RDS(on) to Minimize Conduction Losses\n• Higher Power Density, Improved Thermal Performance, and Higher Efficiency\n• Low QG and Capacitance to Minimize Driver Losses\n• Minimize Driver Losses\n• Small Footprint (5x6 mm) for Compact Design\n• These Devices are Pb−Free, Halogen−Free / BFR Free ;

ONSEMI

安森美半导体

丝印：1D3N06；Package：TDFN9；MOSFET - Power, Single N-Channel, Source-Down TDFN9 60 V, 1.3 m, 243 A

文件：351.83 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SOP8

ON

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SMD

ON/安森美

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SOT883

ON

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