MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous

文件：418 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 80 V, 2.8 m, 131.5 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package (TCPAK10) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：316.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 80 V, 2.8 m, 131.5 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package (TCPAK10) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：316.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous

文件：418 Kbytes 页数：8 Pages

ONSEMI

安森美半导体