丝印：0D8N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.72 m, 368 A

文件：372.71 Kbytes 页数：7 Pages

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MOSFET ??Power, Single N-Channel 40 V, 0.72 m, 368 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：373.7 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.72 m, 368 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：373.7 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, DUAL COOL 40 V, 0.78 m, 310 A

Features • Advanced Dual−Sided Cooling Package • Latest 40 V Power MOSFET Technology for Motor Drive Applications • Extreme Lower On−Resistance to Minimize Conduction Losses • Lower Gate Charge to Minimize Gate Driving and Switching Losses • Soft Body Diode Reverse Recovery • These Devices

文件：247.22 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, DUAL COOL 40 V, 0.78 m, 310 A

Features • Advanced Dual−Sided Cooling Package • Latest 40 V Power MOSFET Technology for Motor Drive Applications • Extreme Lower On−Resistance to Minimize Conduction Losses • Lower Gate Charge to Minimize Gate Driving and Switching Losses • Soft Body Diode Reverse Recovery • These Devices

文件：247.22 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.72 m, 368 A

文件：372.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体