MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.52 m, 423 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：223.1 Kbytes 页数：7 Pages

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丝印：0D5N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.52 m, 423 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：223.1 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Power MOSFET 40 V, 414 A, 0.52mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• Wettable Flank Option\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• RoHS Compliant;

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安森美半导体

MOSFET - Power, Single N-Channel, Logic Level, SO-8FL 40 V, 0.49 m, 455 A

Features • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Loss • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • High Switc

文件：137.39 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, TOLL

文件：305.18 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, TOLL

文件：305.18 Kbytes 页数：7 Pages

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安森美半导体