MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−sided Cooled Packaging • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Applications • Synchronous Rectifier • DC−DC Conversion • Oring FET and Load Switching

文件：409.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, DUAL COOL N-Channel DFN8 5x6 60 V, 1.5 m, 224 A

Features • Advanced Dual−sided Cooled Packaging • Ulra Low RDS(on) • MSL1 Robust Packaging Design • AEC−Q101 Qualified Typical Applications • Orring FET/Load Switching • Synchronous Rectifier • DC−DC Conversion

文件：369.86 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

ONSEMI

安森美半导体