MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：324.56 Kbytes 页数：8 Pages

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丝印：1D6N10MC；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：324.56 Kbytes 页数：8 Pages

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安森美半导体

Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. \nWettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• Wettable Flank Option\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• RoHS Compliant;

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安森美半导体

MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

文件：331.37 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

文件：331.37 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A

文件：262.66 Kbytes 页数：7 Pages

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安森美半导体