MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

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丝印：1D6N10MC；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

文件：331.37 Kbytes 页数：8 Pages

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Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ, PQFN 8x8

This N-Channel PTNG 100V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. • Very Low RDS(on), Shielded Gate Trench Technology\n• Low Profile PQFN 8x8 package\n• Maximum junction temperature of 175C\n• Soft Body diode with low Qrr\n• RoHS Compliant;

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MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A

文件：262.66 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A

文件：262.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：324.56 Kbytes 页数：8 Pages

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