丝印：1D6N10MC；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：324.56 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D6N10MC；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

文件：331.37 Kbytes 页数：8 Pages

ONSEMI

安森美半导体