丝印：1D7N08H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 241.3 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：359.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D7N08H；Package：M0-299A；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 203 A

文件：364.53 Kbytes 页数：8 Pages

ONSEMI

安森美半导体