丝印：1D9S40Y；Package：SOT669；N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 200

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