PSMN1R9-40YSD中文资料安世数据手册PDF规格书

1. General description

200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

• 200 A continuous ID(max) rating

• Avalanche rated, 100 tested at IAS = 180 A

• Strong SOA (linear-mode) rating

• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

• Low QRR, QG and QGD for high system efficiency and low EMI designs

• Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage

• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to

175 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

• Low parasitic inductance and resistance

3. Applications

• High-performance synchronous rectification

• DC-to-DC converters

• High performance and high efficiency server power supply

• Brushless DC motor control

• Battery protection

• Load-switch and eFuse

• Inrush management, hotswap