TMUX1104DGSR

Marking：1D7；Package：VSSOP；5-V, Low-Leakage-Current, 4:1 Precision Multiplexer

NTBLS1D7N10MCTXG

Marking：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 272 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NVBLS1D7N08H

Marking：1D7N08H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 241.3 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NVBLS1D7N10MCTXG

Marking：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LowersSwitchingNoise/EMI •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJS1D7N04CTWG

Marking：1D7N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

NVMJS1D7N06CTWG

Marking：1D7N06C；Package：LFPAK8；MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS1D7N04CTWG

Marking：1D7N04C；Package：LFPAK4；MOSFET - Power, Single N-Channel 40 V, 1.7 m, 190 A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •LFPAK4Package,IndustryStandard •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

PSMN1R7-40YLD

Marking：1D7L40Y；Package：SOT669；N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1.Generaldescription 200A,logiclevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56package usingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedand qualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits •200A

TLV74318PDBVR

Marking：1D7T；Package：SOT-23；TLV743P 300-mA, Low-Dropout Regulator

1Features 1•InputVoltageRange:1.4Vto5.5V •StableOperationWith1-μFCeramicOutput Capacitor •FoldbackOvercurrentProtection •Packages: –SOT-23(5) –X2SON(4) •VeryLowDropout:125mVat300mA(3.3VOUT) •Accuracy:1%(Typical),1.4%(Maximum) •LowIQ:34μA

NTBLS1D7N08H

Marking：1D7N08H；Package：M0-299A；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 203 A