MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：357.47 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

文件：394.87 Kbytes 页数：7 Pages

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安森美半导体

丝印：0D7N06CL；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

文件：394.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N06C；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：357.47 Kbytes 页数：8 Pages

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安森美半导体

Single N-Channel Power MOSFET 60V, 464A, 0.72mΩ

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. \nWettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• Wettable Flank Option\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• RoHS Compliant;

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安森美半导体

单 N 沟道，功率 MOSFET，60V，447A，0.68mΩ

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. \nWettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• Wettable Flank Option\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• RoHS Compliant;

ONSEMI

安森美半导体

MOSFET AFSM T6 60V SG NCH

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安森美半导体