丝印：NVMTS1D2N08H；Package：POWER88；MOSFET - Power, Single N-Channel 80 V, 1.1 m, 337 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：406.54 Kbytes 页数：7 Pages

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Single N-Channel Power MOSFET 80V, 337A, 1.1mΩ

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. \nWettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• Wettable Flank Option\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• RoHS Compliant;

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MOSFET - Power, Single N-Channel 80 V, 1.1 m, 335 A

文件：475.96 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel, D2PAK7 80 V, 1.34 m, 290 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualification • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：304.22 Kbytes 页数：8 Pages

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