Single N-Channel Power MOSFET 80V, 335A, 1.1mΩ, PQFN 8x8

This N-Channel T8 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• RoHS Compliant;

ONSEMI

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丝印：NTMTS1D2N08H；Package：DFNW8；MOSFET - Power, Single N-Channel 80 V, 1.1 m, 335 A

文件：475.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, D2PAK7 80 V, 1.34 m, 290 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualification • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：304.22 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 1.1 m, 337 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：406.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体