NTMTS1D2N08H

Single N-Channel Power MOSFET 80V, 335A, 1.1mΩ, PQFN 8x8; • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• RoHS Compliant\n;

This N-Channel T8 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

NTMTS1D2N08H

丝印：NTMTS1D2N08H；Package：DFNW8；MOSFET - Power, Single N-Channel 80 V, 1.1 m, 335 A

NVBGS1D2N08H

MOSFET-Power,SingleN-Channel,D2PAK780V,1.34m,290A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101Qualification •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

NVMTS1D2N08H

MOSFET-Power,SingleN-Channel80V,1.1m,337A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant