首页>NTMTS1D2N08H>规格书详情
NTMTS1D2N08H数据手册ONSEMI中文资料规格书
NTMTS1D2N08H规格书详情
描述 Description
This N-Channel T8 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.
特性 Features
• Very Low RDS(on), Shielded Gate Trench Technology
• Minimize conduction losses
• Low Profile PQFN 8x8 package
• High peak current and low parasitic inductance
• Maximum junction temperature of 175C
• Offers a wider design margin for thermally challenged applications
• RoHS Compliant
应用 Application
• Motor Control
• DC-DC Converters
• Battery Management/Protection
• Power Steering/ Load Switch
• Power Tools, E-Scooters, Drones
• Battery Packs/ Energy Storage Units
• Telecom, Netcom
• Power Supplies
技术参数
- 制造商编号
：NTMTS1D2N08H
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：80
- VGS Max (V)
：20
- VGS(th) Max (V)
：4
- ID Max (A)
：335
- PD Max (W)
：5
- RDS(on) Max @ VGS = 2.5 V(mΩ)
：\-\
- RDS(on) Max @ VGS = 4.5 V(mΩ)
：\-\
- RDS(on) Max @ VGS = 10 V(mΩ)
：1.1
- Qg Typ @ VGS = 4.5 V (nC)
：\-\
- Qg Typ @ VGS = 10 V (nC)
：147
- Ciss Typ (pF)
：10100
- Package Type
：DFNW-8
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
22+ |
N/A |
3206 |
原装正品物料 |
询价 | |||
ON |
22+ |
NA |
2490 |
原装正品支持实单 |
询价 | ||
ON2 |
23+ |
原厂原封 |
3000 |
订货1周 原装正品 |
询价 | ||
ON/安森美 |
22+ |
TDFNW-8 |
9000 |
原装正品,支持实单! |
询价 | ||
onsemi(安森美) |
24+ |
DFNW-8(8 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ONSEMI/安森美 |
2511 |
DFNW-8 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ONN |
2324+ |
1458 |
原装正品,超低价出售 |
询价 | |||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
NK/南科功率 |
2025+ |
DFN5X6 |
986966 |
国产 |
询价 | ||
onsemi |
2025+ |
55740 |
询价 |
