MMBT3906

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •ComplementaryNPNType:MMBT3904 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHig

MMBT3906

GeneralPurposeTransistor(PNP)

PNPSiliconType Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMBT3904) IdealforMediumPowerAmplificationandSwitching

MMBT3906

PNPGeneralPurposeAmplifier

MMBT3906

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

MMBT3906

PNPGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-40V •CollectorcurrentIC=-200mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

MMBT3906

30.3WattsPNPPlastic-EncapsulateTransistors

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeans greencompound(halogen-free)

MMBT3906

SurfaceMountSi-Epi-PlanarSwitchingTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreel

MMBT3906

PNPGeneralPurposeTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable(MMBT3904). ●CollectorCurrentCapabilityICM=-200mA. ●LowVoltage(Max:-40V). APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMBT3906

SMDGeneralPurposeTransistor(PNP)

Features •PNPSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance

MMBT3906

PNPswitchingtransistor

DESCRIPTION PNPswitchingtransistorinaSOT23plasticpackage. NPNcomplement:MMBT3904. FEATURES •CollectorcurrentcapabilityIC=−200mA •Collector-emittervoltageVCEO=−40V. APPLICATIONS •Generalswitchingandamplification.