General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC= 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.)

文件：37.22 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

文件：143.95 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955Tis designed for general purpose of amplifier and switching applications.

文件：93.74 Kbytes 页数：2 Pages

UTC

友顺

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications

文件：279.05 Kbytes 页数：3 Pages

CDIL

COMPLEMENTARY SILICON POWER TRANSISTORS

Power Transistors

文件：47.25 Kbytes 页数：1 Pages

Central

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

文件：123.69 Kbytes 页数：3 Pages

MOSPEC

统懋

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

文件：129.259 Kbytes 页数：4 Pages

Motorola

摩托罗拉

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier andswitching applications. Pinning 1 = Base 2 = Collector 3 = Emitter

文件：196.1 Kbytes 页数：1 Pages

DCCOM

道全

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC= -4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

文件：132.43 Kbytes 页数：3 Pages

ISC

无锡固电

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA

文件：85.06 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司