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零件编号	下载&订购	功能描述	制造商&上传企业
MJE2955T	文件：123.69 Kbytes Page：3 Pages	POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARYSILICONPOWERTRANSISTORS.	MOSPEC MOSPEC
MJE2955T	文件：129.259 Kbytes Page：4 Pages	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc	MotorolaMotorola, Inc 摩托罗拉
MJE2955T	文件：65.19 Kbytes Page：4 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
MJE2955T	文件：64.709 Kbytes Page：1 Pages	SILICON EPITAXIAL PLANAR TRANSISTOR GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose	WINGSWing Shing Computer Components Wing Shing Computer Components
MJE2955T	文件：47.46 Kbytes Page：1 Pages	PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose	WINGSWing Shing Computer Components Wing Shing Computer Components
MJE2955T	文件：37.22 Kbytes Page：4 Pages	General Purpose and Switching Applications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGainBandwidthProduct:fT=2MHz(Min.)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJE2955T	文件：61.49 Kbytes Page：4 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
MJE2955T	文件：93.74 Kbytes Page：2 Pages	HIGH VOLTAGE TRANSISTOR HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE2955Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
MJE2955T	文件：92.64 Kbytes Page：3 Pages	Silicon PNP Power Transistors MJE2955T DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications.	SAVANTIC Savantic, Inc.
MJE2955T	文件：196.1 Kbytes Page：1 Pages	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeamplifierandswitchingapplications. Pinning 1=Base 2=Collector 3=Emitter	DCCOMDc Components 直流元件直流元件有限公司
MJE2955T	文件：143.95 Kbytes Page：4 Pages	Complementary Silicon Plastic Power Transistors 10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE2955T	文件：93.11 Kbytes Page：1 Pages	Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.	TGS Tiger Electronic Co.,Ltd
MJE2955T	文件：132.43 Kbytes Page：3 Pages	Silicon PNP Power Transistors DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJE2955T	文件：47.25 Kbytes Page：1 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS PowerTransistors	CentralCentral Semiconductor Corp 美国中央半导体
MJE2955T	文件：279.05 Kbytes Page：3 Pages	PLASTIC POWER TRANSISTORS PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications	CDIL CDIL
MJE2955T	文件：85.06 Kbytes Page：2 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseingeneral-purposeamplifierandswitchingapplications FEATURES: PowerDissipation-PD=75W©Tc=25°C DCCurrentGainhFE=20-100©lc=4.0A *vCE(isrt)=1-1V(Max.)©lc=4.0A,IB=400mA	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MJE2955T	文件：882.29 Kbytes Page：6 Pages	Silicon PNP transistor in a TO-220 Plastic Package.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
MJE2955T	文件：66.32 Kbytes Page：4 Pages	High Voltage Power Transistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE2955T	文件：94.24 Kbytes Page：3 Pages	Silicon NPN Power Transistors	SAVANTIC Savantic, Inc.
MJE2955T	文件：161.9 Kbytes Page：4 Pages	HIGH VOLTAGE TRANSISTOR	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司

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产品属性

产品编号：
MJE2955T
制造商：
onsemi
类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
包装：
散装
晶体管类型：
PNP
不同 Ib、Ic 时 Vce 饱和压降（最大值）：
8V @ 3.3A，10A
电流 - 集电极截止（最大值）：
700µA
不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
20 @ 4A，4V
频率 - 跃迁：
2MHz
工作温度：
-55°C ~ 150°C（TJ）
安装类型：
通孔
封装/外壳：
TO-220-3
供应商器件封装：
TO-220
描述：
TRANS PNP 60V 10A TO220

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳广芯微电子科技有限公司	MJE2955T	ST	21+	TO-220	8000	现货	询价
深圳市高捷芯城科技有限公司	MJE2955T	ST(意法半导体)	23+	TO-220	942	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市锦喆鸿电子有限公司	MJE2955T	ST	20+	TO-220	9986		询价
深圳市恒意法电子有限公司	MJE2955T	STM	21+	TO-220AB	5000	专营原装正品现货,当天发货,可开发票!	询价
深圳市安博威科技有限公司	MJE2955T	STM	21+	TO-220-3	6000	原装正品有挂有货	询价
深圳市华高宇电子有限公司	MJE2955T	STM	21+/22+		6000	TO-220-3	询价
深圳市芯巴巴科技有限公司	MJE2955T	ST	12+	TO-220	1000	只做原装假一赔万	询价
深圳兆威电子有限公司	MJE2955T	ST/意法	23+	TO-220AB	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市汇创佳电子科技有限公司	MJE2955T	ST(意法半导体)	22+	TO-220-3	143	QQ询价绝对原装正品	询价
深圳市欧立现代科技有限公司	MJE2955T	ST	22+	TO-220	9518	绝对原装现货,价格低,欢迎询购!	询价

更多MJE2955T供应商更新时间2023-10-13 15:08:00

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