MJE2955T

Complementary Silicon Plastic Power Transistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min

MJE2955T

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

MJE2955T

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications.

MJE2955T

COMPLEMENTARY SILICON POWER TRANSISTORS

PowerTransistors

MJE2955T

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

MJE2955T

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseingeneral-purposeamplifierandswitchingapplications FEATURES: *PowerDissipation-PD=75W©Tc=25°C *DCCurrentGainhFE=20-100©lc=4.0A *vCE(isrt)=1-1V(Max.)©lc=4.0A,IB=400mA

MJE2955T

Silicon PNP transistor in a TO-220 Plastic Package.

MJE2955T

High Voltage Power Transistors

MJE2955T

Silicon NPN Power Transistors

MJE2955T

HIGH VOLTAGE TRANSISTOR