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MJD31CT4

Low voltage NPN power transistor

Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ

文件:243.6 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

MJD31CT4

Complementary Power Transistors

文件:81.61 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MJD31CT4

Low voltage NPN power transistor

The device is manufactured in planar technology with a “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. • Surface-mounting TO-252 power package in tape and reel \n• Complementary to the PNP type MJD32CT4;

ST

意法半导体

MJD31CT4

Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:剪切带(CT) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PWR NPN 3A 100V DPAK

ONSEMI

安森美半导体

MJD31CT4

Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 100V 3A DPAK

STMICROELECTRONICS

意法半导体

MJD31CT4-A

Low voltage NPN power transistor

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting

文件:241.24 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

MJD31CT4G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件:129.229 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

MJD31CT4G

Complementary Power Transistors

文件:100.84 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MJD31CT4G

Complementary Power Transistors

文件:135.34 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MJD31CT4G

Complementary Power Transistors

文件:81.61 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

产品属性

  • 产品编号:

    MJD31CT4

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    剪切带(CT)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1.2V @ 375mA,3A

  • 电流 - 集电极截止(最大值):

    50µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    10 @ 3A,4V

  • 频率 - 跃迁:

    3MHz

  • 工作温度:

    -65°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 描述:

    TRANS PWR NPN 3A 100V DPAK

供应商型号品牌批号封装库存备注价格
ST(意法半导体)
24+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
询价
STM
22+
2500
TO-252-3 (DPAK)
询价
ST/意法半导体
22+
TO-252-3
6008
原装正品现货 可开增值税发票
询价
ST/意法半导体
25+
TO-252-3
4650
绝对原装公司现货
询价
ST
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ST(意法)
25+
DPAK
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
ST
24+
TO-252
11200
新进库存/原装
询价
MOT
06+
原厂原装
20051
只做全新原装真实现货供应
询价
ONSEMICONDU
24+
原装进口原厂原包接受订货
6582
原装现货假一罚十
询价
ST
24+/25+
5000
原装正品现货库存价优
询价
更多MJD31CT4供应商 更新时间2026-4-18 23:01:00