MMBT3906

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon

MMBT3906

GENERALPURPOSEAPPLIATION

FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3904

MMBT3906

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMBT3904) IdealforMediumPowerAmplificationandSwitching

MMBT3906

SMALLSIGNALPNPTRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPTRANSISTOR ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THENPNCOMPLEMENTARYTYPEISMMBT3904 APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITH

MMBT3906

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor PNPSilicon Leadfreeproduct

MMBT3906

PNPswitchingtransistor

DESCRIPTION PNPswitchingtransistorinaSOT23plasticpackage. NPNcomplement:MMBT3904. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.40V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment.

MMBT3906

PNPGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA.

MMBT3906

PNPSiliconSwitchingTransistor

PNPSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3906SandSMBT3906U: Two(galvanic)internalisolatedtransistor withgoodmatchinginonepackage •Complementarytypes: SMBT3904...MMBT3904(NPN) •SMB

MMBT3906

PNPGeneralPurposeAmplifier

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof300mWattsofPowerDissipation •Marking:2A

MMBT3906

SMALLSIGNALTRANSISTORS(PNP)

FEATURES ♦PNPSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ♦Ascomplementarytype,theNPN transistorMMBT3904isrecommended. ♦ThistransistorisalsoavailableintheTO-92casewith thetypedesignation2N3906.