| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MJ11032 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) • | MotorolaMotorola, Inc 摩托罗拉 |  | |
MJ11032 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJ11032 | POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi | MOSPEC MOSPEC |  | |
MJ11032 | NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS | WINGSWing Shing Computer Components Wing Shing Computer Components |  | |
MJ11032 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde | SEME-LAB Seme LAB |  | |
MJ11032 | High-Current Complementary Silicon Power Transistors High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
MJ11032 | Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A •ComplementtothePNPMJ11033 APPLICATIONS •Designedforuseasoutputdevicesincomplementary generalpurposeamplifierappl | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | |
MJ11032 | isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A •ComplementtoTypeMJ11033 APPLICATIONS •Designedforuseasoutputdevicesincomplementary generalpurposeamplifierapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MJ11032 | High-Current Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJ11032 | High?묬urrent Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJ11032 | 包装：散装 封装/外壳：TO-204AE 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 120V 50A TO204 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
High?묬urrent Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
High-Current Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-204AE 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 120V 50A TO204 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
PVCandNylonLEDSpacers | Heyco Heyco |  | ||
EMI/EMCFILTER Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo | DITDONG IL TECHNOLOGY LTD. 东益科技东益科技有限公司 |  | ||
EMI/EMCFILTER Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo | DITDONG IL TECHNOLOGY LTD. 东益科技东益科技有限公司 | | ||
PatchLead-CAT5E PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | ||
Intellimod??ModuleApplicationSpecificIPM(4Amperes/600Volts) INTEGRATEDFUNCTIONSANDFEATURES •Converterbridgefor3phaseAC-to-DCpowerconversion. •3phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCONTROLFUNCTIONS: •P-SideIGBTs:Drivecircuit,high-level-s | POWEREX POWEREX |  | ||
TEMPERATURESENSORIC DESCRIPTION TheTK11032isatemperaturesensorICwithalinearoutputof6mV/°Covertherangeof-30to+105°C.Itswideoperatingvoltagerangeof2.7to10.0Vmakesitsuitableforanumberofapplicationsrequiringaccuratetemperaturecontrol,suchaselectronicthermostatsforclimate | Toko Toko Inc. |  |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl+Di
- 性质：
低频或音频放大 （LF）
- 封装形式：
直插封装
- 极限工作电压：
120V
- 最大电流允许值：
50A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
- 最大耗散功率：
300W
- 放大倍数：
- 图片代号：
E-44
- vtest：
120
- htest：
999900
- atest：
50
- wtest：
300
产品属性
- 产品编号：
MJ11032
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
3.5V @ 500mA，50A
- 电流 - 集电极截止（最大值）：
2mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
1000 @ 25A，5V
- 工作温度：
-55°C ~ 200°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-204AE
- 供应商器件封装：
TO-204（TO-3）
- 描述：
TRANS NPN DARL 120V 50A TO204
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
20+ |
TO-3 |
100 |
全新原装,价格优势 |
询价 | ||
MOTOROLA/摩托罗拉 |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
isc |
2024+ |
TO-3 |
58000 |
国产品牌isc,质量等同原装 |
询价 | ||
ON/安森美 |
10+ |
TO-3 |
60 |
原装正品 专营军工 |
询价 | ||
SGS |
2017+ |
CAN |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
MOTOROLA |
1635+ |
6000 |
好渠道!好价格!一片起卖! |
询价 | |||
ON |
23+ |
TO-3 |
5500 |
现货,全新原装 |
询价 | ||
ON |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
询价 | ||
MOT |
23+ |
SOP6 |
18000 |
询价 | |||
MOT |
TO-3 |
10000 |
询价 |
