零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
MJ11032 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) • | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | |
MJ11032 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJ11032 | POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | |
MJ11032 | NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 | WINGS | |
MJ11032 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde | SEME-LAB Seme LAB | SEME-LAB | |
MJ11032 | High-Current Complementary Silicon Power Transistors High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
MJ11032 | Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A •ComplementtothePNPMJ11033 APPLICATIONS •Designedforuseasoutputdevicesincomplementary generalpurposeamplifierappl | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | |
MJ11032 | isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A •ComplementtoTypeMJ11033 APPLICATIONS •Designedforuseasoutputdevicesincomplementary generalpurposeamplifierapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
MJ11032 | High-Current Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJ11032 | High?묬urrent Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
产品属性
- 产品编号:
MJ11032
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
3.5V @ 500mA,50A
- 电流 - 集电极截止(最大值):
2mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
1000 @ 25A,5V
- 工作温度:
-55°C ~ 200°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-204AE
- 供应商器件封装:
TO-204(TO-3)
- 描述:
TRANS NPN DARL 120V 50A TO204
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
M |
24+ |
TO 3 |
157341 |
明嘉莱只做原装正品现货 |
询价 | ||
ONSEMI/安森美 |
25+ |
TO-3 |
45000 |
ONSEMI/安森美全新现货MJ11032即刻询购立享优惠#长期有排单订 |
询价 | ||
MOTOROLA/摩托罗拉 |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
ON/安森美 |
24+ |
TO-3 |
66800 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
询价 | ||
ON |
23+ |
TO-3 |
5500 |
现货,全新原装 |
询价 | ||
ON |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
询价 | ||
MOT |
24+ |
TO-3 |
10000 |
询价 | |||
ON |
24+ |
TO-3 |
2300 |
十年品牌!原装现货!!! |
询价 | ||
MOT/ON |
24+ |
TO-3 |
250 |
原装现货假一罚十 |
询价 | ||
ON |
16+ |
TO-3P |
10000 |
全新原装现货 |
询价 |
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