MJD117

Complementary Darlington Power Transistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications

MJD117

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin

MJD117

EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD112/L.

MJD117

D-PAK for Surface Mount Applications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP117

MJD117

TRANSISTOR (PNP)

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●LowCollector-EmitterSaturationVoltage ●ComplementarytoMJD112

MJD117

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •HighDCcurrentgain •Built-inadamperdiodeatE-C •Leadformedforsurfacemountapplications(NOsuffix) •Straightlead(IPAK,“－I”suffix) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designe

MJD117

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP117. Applications Mediumpowerswitchingapplications.

MJD117

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications

MJD117

Silicon PNP Power Transistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

MJD117

Silicon PNP Power Transistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.