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MMBT3906

HighDCcurrentgain:0.1mAto100mALowcollector-emittersaturationvoltage

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

MMBT3906

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMBT3906

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Ascomplementarytype,theNPNtransistor MMBT3904isRecommended ●Epitaxialplanardieconstruction

DAYADaya Electric Group Co., Ltd.

大亚电器集团大亚电器集团有限公司

MMBT3906

-200mA,-40VPNPPlasticEncapsulatedTransistor

FEATURES ♦CollectorcurrentcapabilityIC=-200mA ♦Collector-emittervoltageVCEO=-40V. APPLICATION ♦Generalswitchingandamplification.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT3906

PNPGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMBT3906

SurfaceMountSi-Epi-PlanarSwitchingTransistors

Diotec

Diotec Semiconductor

MMBT3906

SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP)

RECTRON

Rectron Semiconductor

MMBT3906

NPNGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMBT3906

PNPGENERALPURPOSESWITCHINGTRANSISTOR

Voltage--40VoltsPowerDissipation-300mWatt FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypeAvailable(MMBT3904) ●IdealforMediumPowerAmplificationandSwitching

DIOTECH

Diotech Company.

MMBT3906

40VPNPSMALLSIGNALTRANSISTOR

Features ●EpitaxialPlanarDieConstruction ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryNPNType:MMBT3904 ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHig

DIODESDiodes Incorporated

美台半导体

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