General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.)

文件：36.92 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

文件：143.95 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERAL PUPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (fT = 25 °C)

文件：216.66 Kbytes 页数：6 Pages

Samsung

三星

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

文件：42.73 Kbytes 页数：2 Pages

UTC

友顺

COMPLEMENTARY SILICON POWER TRANSISTORS

Power Transistors

文件：47.25 Kbytes 页数：1 Pages

Central

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

文件：123.69 Kbytes 页数：3 Pages

MOSPEC

统懋

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

文件：129.259 Kbytes 页数：4 Pages

Motorola

摩托罗拉

Complementary Power Transistor

Description: Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C • DC current gain hFE = 20 (Min.) at IC = 4A • VCE(sat) = 1.1V (Max.) at IC = 4A, IB = 400mA

文件：652.79 Kbytes 页数：4 Pages

MULTICOMP

易络盟

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier andswitching applications.

文件：196.12 Kbytes 页数：1 Pages

DCCOM

道全

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·High DC Current Gain-: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.

文件：107 Kbytes 页数：2 Pages

ISC

无锡固电