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零件编号	下载&订购	功能描述	制造商&上传企业
MJE3055T	文件：123.69 Kbytes Page：3 Pages	POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARYSILICONPOWERTRANSISTORS.	MOSPEC MOSPEC
MJE3055T	文件：129.259 Kbytes Page：4 Pages	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc	MotorolaMotorola, Inc 摩托罗拉
MJE3055T	文件：64.709 Kbytes Page：1 Pages	SILICON EPITAXIAL PLANAR TRANSISTOR GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose	WINGSWing Shing Computer Components Wing Shing Computer Components
MJE3055T	文件：216.66 Kbytes Page：6 Pages	NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS) GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)	SamsungSamsung Group 三星三星半导体
MJE3055T	文件：36.92 Kbytes Page：4 Pages	General Purpose and Switching Applications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJE3055T	文件：61.49 Kbytes Page：4 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
MJE3055T	文件：42.73 Kbytes Page：2 Pages	HIGH VOLTAGE TRANSISTOR HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
MJE3055T	文件：196.12 Kbytes Page：1 Pages	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeamplifierandswitchingapplications.	DCCOMDc Components 直流元件直流元件有限公司
MJE3055T	文件：143.95 Kbytes Page：4 Pages	Complementary Silicon Plastic Power Transistors 10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE3055T	文件：93.11 Kbytes Page：1 Pages	Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.	TGS Tiger Electronic Co.,Ltd
MJE3055T	文件：65.19 Kbytes Page：4 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
MJE3055T	文件：107 Kbytes Page：2 Pages	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955T APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJE3055T	文件：121.52 Kbytes Page：4 Pages	Silicon NPN Power Transistors DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE2955T ·DCcurrentgain-hFE=20–70@IC=4Adc ·Collector–emittersaturationvoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc APPLICATIONS ·Designedforgeneral–purpose switchingandamplifierapplications.	SAVANTIC Savantic, Inc.
MJE3055T	文件：939.29 Kbytes Page：6 Pages	Silicon NPN transistor in a TO-220 Plastic Package. Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features LargeDCcurrent(IC=10A),highfT(fT≥2Mhz). Applications Generalpurposeandswitchingapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
MJE3055T	文件：279.05 Kbytes Page：3 Pages	PLASTIC POWER TRANSISTORS PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications	CDIL CDIL
MJE3055T	文件：85.06 Kbytes Page：2 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseingeneral-purposeamplifierandswitchingapplications FEATURES: PowerDissipation-PD=75W©Tc=25°C DCCurrentGainhFE=20-100©lc=4.0A *vCE(isrt)=1-1V(Max.)©lc=4.0A,IB=400mA	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MJE3055T	文件：47.25 Kbytes Page：1 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS PowerTransistors	CentralCentral Semiconductor Corp 美国中央半导体
MJE3055T	文件：123.16 Kbytes Page：4 Pages	Silicon NPN Power Transistors	SAVANTIC Savantic, Inc.
MJE3055T	文件：119.69 Kbytes Page：2 Pages	HIGH VOLTAGE TRANSISTOR	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
MJE3055T	文件：76.15 Kbytes Page：3 Pages	TO-220 - Power Transistors and Darlingtons	RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司

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产品属性

产品编号：
MJE3055T
制造商：
onsemi
类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
包装：
散装
晶体管类型：
NPN
不同 Ib、Ic 时 Vce 饱和压降（最大值）：
8V @ 3.3A，10A
电流 - 集电极截止（最大值）：
700µA
不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
20 @ 4A，4V
频率 - 跃迁：
2MHz
工作温度：
-55°C ~ 150°C（TJ）
安装类型：
通孔
封装/外壳：
TO-220-3
供应商器件封装：
TO-220
描述：
TRANS NPN 60V 10A TO220

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MJE3055T	ST(意法半导体)	23+	TO-220	942	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市恒意法电子有限公司	MJE3055T	STM	21+	TO220ABNO	6000	专营原装正品现货,当天发货,可开发票!	询价
深圳市航润创能电子集团有限公司	MJE3055T	ST/意法	21+	NA	65250	只做原装,假一罚十	询价
深圳市鼎欣微电子有限公司	MJE3055T	ST/意法	21+	TO220	28000	原厂原装货/代理渠道	询价
深圳市凌旭科技有限公司	MJE3055T	FSC	21+	TO-220	800	十年信誉,只做原装,有挂就有现货!	询价
深圳市安博威科技有限公司	MJE3055T	STM	21+	TO-220-3	52050	原装正品有挂有货	询价
深圳市富诚威科技有限公司	MJE3055T	ST/意法	22+	TO-220	2769	绝对原装!公司现货!	询价
深圳市金启宁科技有限公司	MJE3055T	ST/意法	21+	TO220	50000	只做原装	询价
深圳市河锋鑫科技有限公司	MJE3055T	ST/意法	1639+	TO-220	1034	原装正品可含税交易	询价
深圳市华高宇电子有限公司	MJE3055T	STM	19+		22050	TO-220-3	询价

更多MJE3055T供应商更新时间2024-4-25 16:13:00

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