| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA 文件:85.06 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
MJE3055T | Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type MJE2955T ·DC current gain -hFE= 20–70 @ IC=4Adc ·Collector–emitter saturation voltage - VCE(sat)= 1.1 Vdc (Max) @ IC=4Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications. 文件:121.52 Kbytes 页数:4 Pages | SAVANTIC | SAVANTIC | |
MJE3055T | Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. 文件:93.11 Kbytes 页数:1 Pages | TGS | TGS | |
MJE3055T | SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose 文件:64.709 Kbytes 页数:1 Pages | WINGS 永盛电子 | WINGS | |
MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 文件:61.49 Kbytes 页数:4 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES 文件:65.19 Kbytes 页数:4 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
MJE3055T | Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Large DC current(IC=10A),high fT(fT≥2Mhz). Applications General purpose and switching applications. 文件:939.29 Kbytes 页数:6 Pages | FOSHAN 蓝箭电子 | FOSHAN | |
MJE3055T | PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications 文件:279.05 Kbytes 页数:3 Pages | CDIL | CDIL | |
MJE3055T | Silicon NPN Power Transistors 文件:123.16 Kbytes 页数:4 Pages | SAVANTIC | SAVANTIC | |
MJE3055T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 文件:213.09 Kbytes 页数:2 Pages | Motorola 摩托罗拉 | Motorola |
产品属性
- 产品编号:
MJE3055T
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
NPN
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
8V @ 3.3A,10A
- 电流 - 集电极截止(最大值):
700µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
20 @ 4A,4V
- 频率 - 跃迁:
2MHz
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220
- 描述:
TRANS NPN 60V 10A TO220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
M |
24+ |
TO 220 |
157380 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
25+ |
TO-220 |
32000 |
ST/意法全新特价MJE3055T即刻询购立享优惠#长期有货 |
询价 | ||
FSC |
21+ |
TO-220 |
800 |
十年信誉,只做原装,有挂就有现货! |
询价 | ||
ST/意法 |
1639+ |
TO-220 |
1034 |
原装正品 可含税交易 |
询价 | ||
STM |
19+ |
22050 |
TO-220-3 |
询价 | |||
ST/意法半导体 |
22+ |
TO-220-3 |
6006 |
原装正品现货 可开增值税发票 |
询价 | ||
ST专家 |
2021+ |
6800 |
原厂原装,欢迎咨询 |
询价 | |||
ST/意法半导体 |
25+ |
TO-220-3 |
4650 |
绝对原装公司现货 |
询价 | ||
ST/意法 |
23+/24+ |
TO220 |
9865 |
主推型号,原装正品,终端BOM表可配单,可开13点税 |
询价 |
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