DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

文件：157.15 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

Central

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

文件：140.07 Kbytes 页数：3 Pages

MOSPEC

统懋

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

文件：157.15 Kbytes 页数：4 Pages

Motorola

摩托罗拉

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

文件：21.71 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon PNP Darlington Power Transistor

文件：195.82 Kbytes 页数：2 Pages

ZSELEC

淄博圣诺

SILICON PLANAR DARLINGTON POWER TRANSISTORS

文件：176.82 Kbytes 页数：3 Pages

CDIL

isc Silicon PNP Darlington Power Transistor

文件：53.44 Kbytes 页数：2 Pages

ISC

无锡固电

High-Current Complementary Silicon Transistors

文件：68.41 Kbytes 页数：4 Pages

ONSEMI

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High-Current Complementary Silicon Transistors

文件：121.43 Kbytes 页数：4 Pages

ONSEMI

安森美半导体