30 A, 120 V PNP Darlington Bipolar Power Transistor

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices. • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc\n• Monolithic Construction with Built-in Base Emitter Shunt Resistor\n• Junction Temperature to +200°C;

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安森美半导体

Trans Darlington PNP 120V 30A 3-Pin(2+Tab) TO-3 Sleeve

NJS

BJT 双极性三极管

SPTECH

质超微

High-Current Complementary Silicon Transistors

文件：121.43 Kbytes 页数：4 Pages

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安森美半导体

High-Current Complementary Silicon Transistors

文件：121.43 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SILICON PLANAR DARLINGTON POWER TRANSISTORS

文件：176.82 Kbytes 页数：3 Pages

CDIL

Package：TO-204AA，TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 120V 30A TO204

ONSEMI

安森美半导体