Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

文件：81.17 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

文件：71.17 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SILICON PLANAR POWER TRANSISTORS

General Purpose Switching and Amplifier Applications 2N3055 NPN MJ2955 PNP

文件：336.47 Kbytes 页数：4 Pages

CDIL

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 115 WATTS

文件：174.38 Kbytes 页数：3 Pages

boca

博卡

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. 1. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc 2. Collector–Emitter Saturation Voltage — VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

文件：130.46 Kbytes 页数：4 Pages

Motorola

摩托罗拉

Transistor, PNP TO-3

Description: Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features: • DC current gain - hFE = 20 - 70 at IC = 4A DC • Collector-emitter saturation voltage-VCE (sat) = 1.1V DC (max.) at IC = 4A DC • Excellent safe operating ar

文件：449.04 Kbytes 页数：4 Pages

MULTICOMP

易络盟

isc Silicon PNP Power Transistors

DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage-: VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055 APPLICATIONS ·Designed for general-purpose switching and amplifier applications

文件：112.3 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC current gain -hFE = 20–70 @ IC = 4 Adc ·Excellent safe operating area APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

文件：112.9 Kbytes 页数：3 Pages

SAVANTIC

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER High Current Capability High Power Dissipation Complementary to MJ3055

文件：64.66 Kbytes 页数：1 Pages

WINGS

永盛电子

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi

文件：47.01 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体