MJD127

Complementary Darlington Power Transistors

Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127

MJD127

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

MJD127

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur

MJD127

PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

D▪PACKFORSURFACEMOUNTAPPLICATIONS •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LoadFormedforSurfaceMountApplications(NoSuffix) •StrightLead(I•PACK,-1Suffix) •ElectricallySimilartoPopularTIP127

MJD127

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications

MJD127

TRANSISTOR (PNP)

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP127 ●Built-inaDamperDiodeatE-C

MJD127

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications

MJD127

Silicon PNP epitaxial planer Transistors

Features •HighDCCurrentGain •Built-inaDamperDiodeatE-C •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor

MJD127

TO-252-2L P lastic-Encapsulate Transistors

TRANSISTOR(PNP) Feature ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP127 ●Built-inaDamperDiodeatE-C

MJD127

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •LowCollector-Emittersaturationvoltage •Leadformedforsurfacemountapplications •HighDCcurrentgain •100tested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforgeneralpurposeamplifierandlowspee