Complementary Darlington Power Transistor

文件：87.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

8.0 A，100 V，PNP 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n• Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)\n• Lead Formed Version Available in 16 mm Tape and Reel (\"T4\" Suffix)\n• Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP;

ONSEMI

安森美半导体

中等功率双极型晶体管

MCC

美微科

达林顿管

JSCJ

长晶科技

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件：91.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件：91.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

文件：284.04 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件：300.34 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件：281.37 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

文件：408.73 Kbytes 页数：5 Pages

CDIL