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MJD127

D-PAK for Surface Mount Applications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP127 •ComplementtoMJD122

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD127

Marking:D-PAK;Package:TO-252;PNP Silicon Darlington Transistor

FEATURES •HighDCCurrentGain •ElectricallySimilartoPopularTIP127 •Built-inaDamperDiodeatE-C WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

MJD127

Marking:MJD127;Package:TO-252-2L;TO-252-2L Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain ElectricallySimilartoPopularTIP127 Built-inaDamperDiodeatE-C

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

MJD127

Silicon PNP Power Transistor

DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD127

Silicon PNP Power Transistor

DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD127

D-PAK for Surface Mount Applications

•HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP127 •ComplementtoMJD122

SYC

SYC Electronica

MJD127

Complementary Darlington Power Transistors

Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD127

Silicon PNP epitaxial planer Transistors

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MJD127

isc Silicon PNP Darlington Power Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD127

Complementary Darlington Power Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    MJD127

  • 功能描述:

    达林顿晶体管 8A 100V Bipolar

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
24+
TO-252
959
原厂订货渠道,支持BOM配单一站式服务
询价
CJ/长电
25+
TO-252-2L
20300
CJ/长电原装特价MJD127即刻询购立享优惠#长期有货
询价
2015+
100
公司现货库存
询价
CJ
17+
TO-252
6048
全新原装正品s
询价
ON/安森美
24+
DPAK
20000
只做原厂渠道 可追溯货源
询价
ON
23+
SOT-252
372500
一级分销商
询价
CJ
23+
TO252
52500
原厂原装正品
询价
CJ/长电
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
CJ(江苏长电/长晶)
2023+
N/A
4550
全新原装正品
询价
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
更多MJD127供应商 更新时间2025-7-24 23:00:00